Datasheet · 2025

Vishay TSHG6400 High-Speed 850 nm Infrared Emitting Diode — Datasheet (Rev 1.5)

5 mm 850 nm IR emitter, ±27°; the emitter for the PixArt path.

Author: Vishay
Year: 2025
Type: Datasheet
Credit: Vishay (vishay.com)

ir emitter
850 nm
led

Datasheet Values Refer to PCN-OPT-1296-2023-REV-1 TSHG6400 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 27° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION TSHG6400 is an infrared, 850 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz) PRODUCT SUMMARY COMPONENT TSHG6400 Ie (mW/sr) ϕ (°) λp (nm) tr (ns) 105 ± 27 850 10 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE TSHG6400 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 180 mW Power dissipation Junction temperature Tj 100 °C Ambient temperature range Tamb -40 to +85 °C Tstg -40 to +100 °C Tsd 260 °C RthJA 230 K/W Storage temperature range Soldering temperature t ≤ 5 s, 2 mm from case Thermal resistance junction to ambient J-STD-051, leads 7 mm soldered on PCB Rev. 1.5, 17-Mar-2025 Document Number: 84636 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet Values Refer to PCN-OPT-1296-2023-REV-1 TSHG6400 www.vishay.com Vishay Semiconductors Axis Title Axis Title 200 120 10000 180 1000 120 100 80 100 RthJA = 230 K/W 60 40 90 80 1000 70 1st line 2nd line 140 2nd line IF - Forward Current (mA) 100 160 1st line 2nd line 2nd line PV - Power Dissipation (mW) 10000 110 60 50 RthJA = 230 K/W 40 100 30 20 20 10 10 0 0 20 40 60 80 10 0 0 100 20 40 60 80 100 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF - 1.6 1.8 V IF = 1 A, tp = 100 μs VF - 3.0 - V IF = 100 mA TKVF - -1.5 - mV/K VR = 0 V, f = 1 MHz, E = 0 Cj - 53 - pF IF = 100 mA, tp = 20 ms Ie 45 105 170 mW/sr IF = 1 A, tp = 100 μs Ie - 1035 - mW/sr Reverse current Junction capacitance Radiant intensity IR Not designed for reverse operation μA Radiant power IF = 100 mA, tp = 20 ms φe - 61 - mW Temperature coefficient of φe IF = 100 mA, tp = 20 ms TKφe - -0.27 - %/K ϕ - ± 27 - ° IF = 100 mA λp - 850 - nm Angle of half intensity Peak wavelength IF = 100 mA Δλ - 30 - nm IF = 100 mA, tp = 20 ms TKλp - 0.28 - nm/K Rise time IF = 100 mA tr - 10 - ns Fall time IF = 100 mA tf - 10 - ns Spectral bandwidth Temperature coefficient of λp Rev. 1.5, 17-Mar-2025 Document Number: 84636 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet Values Refer to PCN-OPT-1296-2023-REV-1 TSHG6400 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 160 100 10 10 1 10000 IF = 100 mA, tp = 20 ms 150 140 130 1000 120 1st line 2nd line 1000 100 1st line 2nd line 110 100 100 90 80 70 10 60 -60 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -40 -20 0 40 60 80 100 VF - Forward Voltage (V) Tamb - Ambient Temperature (°C) Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature Axis Title Axis Title 10000 IF = 100 mA, tp = 20 ms 105 1st line 2nd line 1000 100 100 95 2nd line Ie, rel. - Relative Radiant Intensity (%) 100 10 90 -60 -40 -20 0 20 40 60 80 10000 IF = 100 mA 90 80 70 1000 60 1st line 2nd line 110 2nd line VF, rel. - Relative Forward Voltage (%) 20 50 40 100 30 20 10 0 100 700 750 800 850 900 950 10 1000 Tamb - Ambient Temperature (°C) λ - Wavelength (nm) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Wavelength Axis Title Axis0° Title 10° 10 10000 10000 30° 1000 100 0.01 0.001 1 10 100 10 1000 2nd line Ie, rel. - Relative Radiant Intensity 1 1st line 2nd line Ie, rel. - Relative Radiant Intensity (Ie/Ie (100 mA)) tp = 100 μs 0.1 20° 1000 40° 1.0 0.9 50° 0.8 100 60° 70° 0.7 φ - Angular Displacement 2nd line 2nd line IF - Forward Current (mA) tp = 100 μs 2nd line Ie, rel. - Relative Radiant Intensity (%) 10000 1000 80° 10 0.6 0.4 0.2 0 IF - Forward Current (mA) 1st line Fig. 5 - Relative Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Rev. 1.5, 17-Mar-2025 Document Number: 84636 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet Values Refer to PCN-OPT-1296-2023-REV-1 TSHG6400 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R 2.49 (sphere) (3.5) 34.3 ± 0.55 < 0.7 8.7 ± 0.3 7.7 ± 0.15 A Area not plane + 0.2 0.6 - 0.1 1 min. Ø 5 ± 0.15 0.15 0.5 +- 0.05 0.15 0.5 +- 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 Rev. 1.5, 17-Mar-2025 Document Number: 84636 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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