Datasheet · 2025
onsemi NSI45090JD Adjustable Constant Current Regulator & LED Driver — Datasheet
Adjustable 90–160 mA CCR in DPAK; the alternative IR-emitter current regulator.
- led driver
- constant current
- ir emitter
Datasheet · 2025
Adjustable 90–160 mA CCR in DPAK; the alternative IR-emitter current regulator.
DATA SHEET Share Feedback Your Opinion Matters Adjustable Constant Current Regulator & LED Driver www.onsemi.com Ireg(SS) = 90 − 160 mA @ Vak = 7.5 V 45 V, 90 - 160 mA + 15%, 2.7 W Package 4 1 2 3 DPAK3 CASE 369C NSI45090JDT4G The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs (similar to Constant Current Diode, CCD). The CCR is based on Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 20% of regulation with only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher currents by attaching a resistor between Radj (Pin 3) and the Cathode (Pin 4). The Radj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low-side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package and is qualified to stringent AEC−Q101 standard, which is lead-free RoHS compliant and uses halogen-free molding compound, and UL94−V0 certified. Features Robust Power Package: 2.7 Watts Adjustable up to 160 mA Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs UL94−V0 Certified SBT (Self-Biased Transistor) Technology Negative Temperature Coefficient Eliminates Additional Regulation NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Anode 1 3 Radj 4 Cathode MARKING DIAGRAM A Radj 1 YWW NSI 90JG C Y = Year WW = Work Week NSI90J = Specific Device Code G = Pb-Free Package ORDERING INFORMATION Device Package Shipping† NSI45090JDT4G DPAK3 (Pb-Free) 2,500 /T ape & Reel NSV45090JDT4G DPAK3 (Pb-Free) 2,500 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Applications Automobile: Chevron Side Mirror Markers, Cluster, Display & Instrument Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering Switch Contact Wetting Application Note AND8391/D − Power Dissipation Considerations Application Note AND8349/D − Automotive CHMSL Semiconductor Components Industries, LLC, 2014 September, 2025 − Rev. 4 1 Publication Order Number: NSI45090JD/D NSI45090JDT4G MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Rating Symbol Vak Max VR Value Unit Anode-Cathode Voltage 45 V Reverse Voltage 500 mV TJ, Tstg Operating and Storage Junction Temperature Range ESD ESD Rating: Machine Model −55 to +175 Human Body Model C Class 3A (4000 V) Class B (200 V) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Symbol Characteristic Min Typ Max Unit Ireg(SS) Steady State Current @ Vak = 7.5 V (Note 1) 76.5 90 103.5 mA Voverhead Voltage Overhead (Note 2) 1.8 86.2 103 V Ireg(P) Pulse Current @ Vak = 7.5 V (Note 3) 119.6 mA C Capacitance @ Vak = 7.5 V (Note 4) 17 pF C Capacitance @ Vak = 0 V (Note 4) 70 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration 80 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air. 2. Voverhead = Vin − VLEDs. Voverhead is typical value for 65% Ireg(SS). 3. Ireg(P) non-repetitive pulse test. Pulse width t 1 msec. 4. f = 1 MHz, 0.02 V RMS. Figure 1. CCR Voltage−Current Characteristic www.onsemi.com 2 Share Feedback Your Opinion Matters NSI45090JDT4G THERMAL CHARACTERISTICS Symbol Characteristic Max Unit PD Total Device Dissipation (Note 5) TA = 25 C Derate above 25 C 1771 14.16 mW mW/C RθJA Thermal Resistance, Junction-to-Ambient (Note 5) 70.6 C/W RψJL4 Thermal Reference, Junction-to-Lead 4 (Note 5) 6.8 C/W PD Total Device Dissipation (Note 6) TA = 25 C Derate above 25 C 2083 16.67 mW mW/C RθJA Thermal Resistance, Junction-to-Ambient (Note 6) 60 C/W RψJL4 Thermal Reference, Junction-to-Lead 4 (Note 6) 6.3 C/W PD Total Device Dissipation (Note 7) TA = 25 C Derate above 25 C 2080 16.64 mW mW/C RθJA Thermal Resistance, Junction-to-Ambient (Note 7) 60.1 C/W RψJL4 Thermal Reference, Junction-to-Lead 4 (Note 7) 6.5 C/W PD Total Device Dissipation (Note 8) TA = 25 C Derate above 25 C 2441 19.53 mW mW/C RθJA Thermal Resistance, Junction-to-Ambient (Note 8) 51.2 C/W RψJL4 Thermal Reference, Junction-to-Lead 4 (Note 8) 5.9 C/W PD Total Device Dissipation (Note 9) TA = 25 C Derate above 25 C 2309 18.47 mW mW/C RθJA Thermal Resistance, Junction-to-Ambient (Note 9) 54.1 C/W RψJL4 Thermal Reference, Junction-to-Lead 4 (Note 9) 6.2 C/W PD Total Device Dissipation (Note 10) TA = 25 C Derate above 25 C 2713 21.71 mW mW/C RθJA Thermal Resistance, Junction-to-Ambient (Note 10) 46.1 C/W RψJL4 Thermal Reference, Junction-to-Lead 4 (Note 10) 5.7 C/W TJ, Tstg Junction and Storage Temperature Range −55 to +175 C NOTE: Lead measurements are made by non-contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher C/W values based upon empirical measurements and method of attachment. 5. FR−4 @ 300 mm2, 1 oz. copper traces, still air. 6. FR−4 @ 300 mm2, 2 oz. copper traces, still air. 7. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 8. FR−4 @ 500 mm2, 2 oz. copper traces, still air. 9. FR−4 @ 700 mm2, 1 oz. copper traces, still air. 10. FR−4 @ 700 mm2, 2 oz. copper traces, still air. www.onsemi.com 3 Share Feedback Your Opinion Matters NSI45090JDT4G TYPICAL PERFORMANCE CURVES 110 TA = −40 C 100 90 TA = 25 C 80 TA = 85 C 70 TA = 125 C 60 50 110 [ −0.223 mA/C typ @ Vak = 7.5 V Ireg(P), PULSE CURRENT (mA) Ireg(SS), STEADY STATE CURRENT (mA) MINIMUM FR−4 @ 300 MM2, 2 OZ COPPER TRACE, STILL AIR [ −0.144 mA/C typ @ Vak = 7.5 V [ −0.155 mA/C typ @ Vak = 7.5 V 40 30 20 10 0 DC Test Steady State, Still Air, Radj = Open 0 1 3 4 5 6 2 7 8 Vak, ANODE-CATHODE VOLTAGE (V) 9 105 TA = 25 C Radj = Open 100 95 90 Non-Repetitive Pulse Test 85 3.0 10 4.0 5.0 6.0 7.0 8.0 9.0 Vak, ANODE-CATHODE VOLTAGE (V) Figure 3. Pulse Current (Ireg(P)) vs. Anode-Cathode Voltage (Vak) Figure 2. Steady State Current (Ireg(SS)) vs. Anode-Cathode Voltage (Vak) Vak @ 7.5 V TA = 25 C Radj = Open Ireg, CURRENT REGULATION (mA) Ireg(SS), STEADY STATE CURRENT (mA) 105 100 95 90 85 80 75 85 90 95 100 105 110 Ireg(P), PULSE CURRENT (mA) 115 120 104 103 102 101 100 99 98 97 96 95 94 93 92 91 90 89 Vak @ 7.5 V TA = 25 C Radj = Open 0 Vak @ 7.5 V TA = 25 C POWER DISSIPATION (mW) Ireg(SS), STEADY STATE CURRENT (mA) 160 140 130 120 110 100 90 80 1 10 100 10 20 30 50 40 TIME (s) 60 70 80 90 Figure 5. Current Regulation vs. Time Figure 4. Steady State Current vs. Pulse Current Testing 150 10 1000 4800 700 mm2/2 oz 4500 4200 3900 500 mm2/2 oz 3600 3300 3000 300 mm2/2 oz 2700 2400 2100 2 1800 700 mm /1 oz 1500 500 mm2/1 oz 1200 900 300 mm2/1 oz 600 300 40 −40 −20 0 20 60 80 100 120 140 TA, AMBIENT TEMPERATURE (C) Radj (W), Max Power 125 mW Figure 6. Ireg(SS) vs. Radj Figure 7. Power Dissipation vs. Ambient Temperature @ TJ = 175 5C www.onsemi.com 4 Share Feedback Your Opinion Matters NSI45090JDT4G APPLICATIONS INFORMATION The CCR is a self biased transistor designed to regulate the current through itself and any devices in series with it. The device has a slight negative temperature coefficient, as shown in Figure 2 – Tri Temp. (i.e. if the temperature increases the current will decrease). This negative temperature coefficient will protect the LEDS by reducing the current as temperature rises. The CCR turns on immediately and is typically at 20% of regulation with only 0.5 V across it. The device is capable of handling voltage for short durations of up to 45 V so long as the die temperature does not exceed 175 C. The determination will depend on the thermal pad it is mounted on, the ambient temperature, the pulse duration, pulse shape and repetition. Single LED String The CCR can be placed in series with LEDs as a High Side or a Low Side Driver. The number of the LEDs can vary from one to an unlimited number. The designer needs to calculate the maximum voltage across the CCR by taking the maximum input voltage less the voltage across the LED string (Figures 8 and 9). Figure 9. Higher Current LED Strings Two or more fixed current CCRs can be connected in parallel. The current through them is additive (Figure 10). Figure 8. Figure 10. www.onsemi.com 5 Share Feedback Your Opinion Matters NSI45090JDT4G Other Currents the human eye will detect a flicker from the light emitted from the LEDs. Between 500 Hz and 20 kHz the circuit may generate audible sound. Dimming is achieved by turning the LEDs on and off for a portion of a single cycle. This on/off cycle is called the Duty cycle (D) and is expressed by the amount of time the LEDs are on (Ton) divided by the total time of an on/off cycle (Ts) (Figure 13). The adjustable CCR can be placed in parallel with any other CCR to obtain a desired current. The adjustable CCR provides the ability to adjust the current as LED efficiency increases to obtain the same light output (Figure 11). Figure 13. The current through the LEDs is constant during the period they are turned on resulting in the light being consistent with no shift in chromaticity (color). The brightness is in proportion to the percentage of time that the LEDs are turned on. Figure 14 is a typical response of Luminance vs Duty Cycle. Figure 11. 6000 5000 Dimming using PWM ILLUMINANCE (lx) The dimming of an LED string can be easily achieved by placing a BJT in series with the CCR (Figure 12). 4000 3000 2000 Lux Linear 1000 0 0 10 20 30 40 50 60 70 DUTY CYCLE (%) 80 90 100 Figure 14. Luminous Emmitance vs. Duty Cycle Reducing EMI Designers creating circuits switching medium to high currents need to be concerned about Electromagnetic Interference (EMI). The LEDs and the CCR switch extremely fast, less than 100 nanoseconds. To help eliminate EMI, a capacitor can be added to the circuit across R2. (Figure 12) This will cause the slope on the rising and falling edge on the current through the circuit to be extended. The slope of the CCR on/off current can be controlled by the values of R1 and C1. The selected delay / slope will impact the frequency that is selected to operate the dimming circuit. The longer the delay, the lower the frequency will be. The delay time should not be less than a 10:1 ratio of the minimum on time. The frequency is also impacted by the resolution and dimming Figure 12. The method of pulsing the current through the LEDs is known as Pulse Width Modulation (PWM) and has become the preferred method of changing the light level. LEDs being a silicon device, turn on and off rapidly in response to the current through them being turned on and off. The switching time is in the order of 100 nanoseconds, this equates to a maximum frequency of 10 Mhz, and applications will typically operate from a 100 Hz to 100 kHz. Below 100 Hz www.onsemi.com 6 Share Feedback Your Opinion Matters NSI45090JDT4G power applications. The maximum dissipation the device can handle is given by: steps that are required. With a delay of 1.5 microseconds on the rise and the fall edges, the minimum on time would be 30 microseconds. If the design called for a resolution of 100 dimming steps, then a total duty cycle time (Ts) of 3 milliseconds or a frequency of 333 Hz will be required. P D(MAX) + T J(MAX) * T A R qJA Referring to the thermal table on page 2 the appropriate RqJA for the circuit board can be selected. Thermal Considerations As power in the CCR increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the device has good thermal conductivity through the PCB, the junction temperature will be relatively low with high AC Applications The CCR is a DC device; however, it can be used with full wave rectified AC as shown in application notes AND8433/D and AND8492/D and design notes DN05013/D and DN06065/D. Figure 15 shows the basic circuit configuration. Figure 15. Basic AC Application www.onsemi.com 7 Share Feedback Your Opinion Matters NSI45090JDT4G REVISION HISTORY Revision 4 Description of Changes Rebranded the Data Sheet to onsemi format. Date 9/05/2025 This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. www.onsemi.com 8 Share Feedback Your Opinion Matters MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK−3 6.10x6.54x2.28, 2.29P CASE 369C ISSUE L 4 1 2 3 SCALE 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DATE 24 AUG 2026 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DPAK−3 6.10x6.54x2.28, 2.29P PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2011 www.onsemi.com DPAK−3 6.10x6.54x2.28, 2.29P CASE 369C ISSUE L DATE 24 AUG 2026 GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete XXXXXX A L Y WW G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 98AON10527D STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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