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Datasheet · 2022

TI DRV8251A 4.1-A Brushed DC Motor Driver with Integrated Current Sense and Regulation — Datasheet (SLVSFU6)

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H-bridge driver with an IPROPI current mirror and internal current regulation, 50 V absolute maximum; the regulated solenoid stage of the reference board.

Author
Texas Instruments
Year
2022
Type
Datasheet
Credit
Texas Instruments (ti.com)
  • motor driver
  • h-bridge
  • current regulation
  • solenoid driver

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TI DRV8251A 4.1-A Brushed DC Motor Driver with Integrated Current Sense and Regulation — Datasheet (SLVSFU6)

DRV8251A SLVSFU6 – JANUARY 2022 DRV8251A 4.1-A Brushed DC Motor Driver with Integrated Current Sense and Regulation 1 Features 3 Description • N-channel H-bridge brushed DC motor driver The DRV8251A device is an integrated motor driver • 4.5-V to 48-V operating supply voltage range with N-channel H-bridge, charge pump, current sense • Pin-to-pin, RDS(on), voltage, and current sense/ feedback, current regulation, and protection circuitry. regulation variants (external shunt resistor and The charge pump improves efficiency by supporting integrated current mirror) N-channel MOSFET half bridges and 100% duty cycle driving. – DRV8870: 6.5-V to 45-V, 565-mΩ, shunt – DRV8251: 4.5-V to 48-V, 450-mΩ, shunt An internal current mirror architecture on the IPROPI – DRV8251A: 4.5-V to 48-V, 450-mΩ, mirror pin implements current sensing and regulation. This – DRV8231: 4.5-V to 33-V, 600-mΩ, shunt eliminates the need for a large power shunt resistor, – DRV8231A: 4.5-V to 33-V, 600-mΩ, mirror saving board area and reducing system cost. The • High output current capability: 4.1-A Peak IPROPI current-sense output allows a microcontroller • PWM control interface to detect motor stall or changes in load conditions. • Supports 1.8-V, 3.3-V, and 5-V logic inputs The external voltage reference pin, VREF, determines • Integrated IPROPI current sensing for stall the threshold of current regulation during start-up and detection and current regulation stall events without interaction from a microcontroller. • Low-power sleep mode A low-power sleep mode achieves ultra-low quiescent – <1-µA at VVM = 24-V, TJ = 25°C current draw by shutting down most of the internal • Small package and footprint circuitry. Internal protection features include supply – 8-Pin HSOP with PowerPAD™, 4.9 × 6.0 mm undervoltage lockout, output overcurrent, and device • Integrated protection features overtemperature. – VM undervoltage lockout (UVLO) – Auto-retry overcurrent protection (OCP) The DRV8251A is part of a family of devices which – Thermal shutdown (TSD) come in pin-to-pin, scalable RDS(on) and supply voltage options to support various loads and supply 2 Applications rails with minimal design changes. See Section 5 for • Printers information on the devices in this family. View the full • Vacuum robot portfolio of brushed motor drivers on ti.com. • Washer and dryer Device Information (1) • Coffee machine PART NUMBER PACKAGE BODY SIZE (NOM) • POS printer DRV8251ADDA HSOP (8) 4.90 mm × 6.00 mm • Electricity meter • ATMs (Automated Teller Machines) (1) For all available packages, see the orderable addendum at • Ventilators the end of the data sheet. • Surgical equipment 4.5 to 48 V • Electronic hospital bed and bed control • Fitness machine DRV8251A IN1 H-Bridge Controller IN2 Motor Driver VREF Current Sense IPROPI RIPROPI Protec on Simplified Schematic An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. DRV8251A SLVSFU6 – JANUARY 2022 www.ti.com Table of Contents 1 Features............................................................................1 8.5 Device Functional Modes..........................................17 2 Applications..................................................................... 1 8.6 Pin Diagrams............................................................ 18 3 Description.......................................................................1 9 Application and Implementation.................................. 19 4 Revision History.............................................................. 2 9.1 Application Information............................................. 19 5 Device Comparison......................................................... 3 9.2 Typical Application.................................................... 19 6 Pin Configuration and Functions...................................3 9.3 Current Capability and Thermal Performance.......... 26 7 Specifications.................................................................. 4 10 Power Supply Recommendations..............................31 7.1 Absolute Maximum Ratings........................................ 4 10.1 Bulk Capacitance.................................................... 31 7.2 ESD Ratings............................................................... 4 11 Layout........................................................................... 32 7.3 Recommended Operating Conditions.........................4 11.1 Layout Guidelines................................................... 32 7.4 Thermal Information....................................................4 11.2 Layout Example...................................................... 32 7.5 Electrical Characteristics.............................................5 12 Device and Documentation Support..........................33 7.6 Typical Characteristics................................................ 6 12.1 Documentation Support.......................................... 33 7.7 Timing Diagrams......................................................... 8 12.2 Receiving Notification of Documentation Updates..33 8 Detailed Description........................................................9 12.3 Community Resources............................................33 8.1 Overview..................................................................... 9 12.4 Trademarks............................................................. 33 8.2 Functional Block Diagram........................................... 9 13 Mechanical, Packaging, and Orderable 8.3 External Components................................................. 9 Information.................................................................... 33 8.4 Feature Description...................................................11 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. DATE REVISION NOTES January 2022 * Initial Release 2 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: DRV8251A DRV8251A www.ti.com SLVSFU6 – JANUARY 2022 5 Device Comparison Table 5-1. Device Comparison Table Device Supply RDS(on) Current Current-sense Overcurrent Pin-to-pin Package name voltage (V) (mΩ) regulation feedback protection response devices DRV8870 6.5 to 45 565 Automatic Retry HSOP (4.9x6) DRV8870, DRV8251 4.5 to 48 450 External Shunt External Latched Disable HSOP (4.9x6) DRV8251, Resistor Amplifier HSOP (4.9x6) DRV8231 DRV8231 4.5 to 33 600 Automatic Retry WSON (2x2) DRV8251A 4.5 to 48 450 Automatic Retry HSOP (4.9x6) DRV8251A, Internal current mirror (IPROPI) HSOP (4.9x6) DRV8231A 4.5 to 33 600 Automatic Retry DRV8231A WSON (2x2) 6 Pin Configuration and Functions IPROPI 1 8 OUT2 IN2 2 7 GND Thermal IN1 3 Pad 6 OUT1 VREF 4 5 VM Figure 6-1. DDA Package 8-Pin HSOP Top View Table 6-1. Pin Functions PIN TYPE DESCRIPTION NAME NO. GND 7 PWR Device power ground. Connect to system ground. IN1 3 I Logic inputs. Controls the H-bridge output. Has internal pulldowns. See Table 8-2. IN2 2 I Logic inputs. Controls the H-bridge output. Has internal pulldowns. See Table 8-2. IPROPI 1 PWR Analog current output proportional to load current. Section 8.4.2.1. OUT1 6 O H-bridge output. Connect directly to the motor or other inductive load. OUT2 8 O H-bridge output. Connect directly to the motor or other inductive load. 4.5-V to 48-V power supply. Connect a 0.1-µF bypass capacitor to ground, as well as VM 5 PWR sufficient bulk capacitance, rated for the VM voltage. Analog input. Apply a voltage between 0 to 5 V. For information on current regulation, see VREF 4 I the Section 8.4.2.1 section. Thermal pad. Connect to board ground. For good thermal dissipation, use large ground PAD — planes on multiple layers, and multiple nearby vias connecting those planes. Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: DRV8251A DRV8251A SLVSFU6 – JANUARY 2022 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating temperature range (unless otherwise noted)(1) MIN MAX UNIT Power supply pin voltage VM -0.3 50 V Power supply transient voltage ramp VM 0 2 V/µs Logic pin voltage INx -0.3 7 V Reference input pin voltage VREF -0.3 6 V Output pin voltage OUTx -0.7 VM + 0.7 V Current sense input pin voltage IPROPI -0.3 5.75 V Internally Internally Output current OUTx A Limited Limited Ambient temperature, TA –40 125 °C Junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime. 7.2 ESD Ratings VALUE UNIT Electrostatic Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±6000 V(ESD) V discharge Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±750 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ± 6000 V may actually have higher performance. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ± 750 V may actually have higher performance. 7.3 Recommended Operating Conditions over operating temperature range (unless otherwise noted) MIN NOM MAX UNIT VVM Power supply voltage VM 4.5 48 V VVREF Reference voltage VREF 0 3.6 V VIN Logic input voltage INx 0 5.5 V fPWM PWM frequency INx 0 200 kHz Peak output current, 4.5 ≤ VVM < 5.5 V 0 3.7 A IOUT (1) OUTx Peak output current, VVM ≥ 5.5 V 0 4.1 A IIPROPI Peak output current IPROPI 0 3 mA TA Operating ambient temperature –40 125 °C TJ Operating junction temperature –40 150 °C (1) Power dissipation and thermal limits must be observed 7.4 Thermal Information DRV8251A THERMAL METRIC(1) DDA (HSOP) UNIT 8 PINS RθJA Junction-to-ambient thermal resistance 40.4 °C/W 4 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: DRV8251A DRV8251A www.ti.com SLVSFU6 – JANUARY 2022 DRV8251A THERMAL METRIC(1) DDA (HSOP) UNIT 8 PINS RθJC(top) Junction-to-case (top) thermal resistance 54.7 °C/W RθJB Junction-to-board thermal resistance 14.4 °C/W ΨJT Junction-to-top characterization parameter 4.1 °C/W ΨJB Junction-to-board characterization parameter 14.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 4.2 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.5 Electrical Characteristics 4.5 V ≤ VVM ≤ 48 V, –40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical values are at TJ = 25 °C and VVM = 24 V. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLY (VM) IVMQ VM sleep mode current VVM = 24 V, IN1 = IN2 = 0, TJ = 25°C 1 µA IVM VM active mode current VVM = 24 V, IN1 = IN2 = 1 3 4 mA tWAKE Turnon time Control signal to active mode 250 µs tSLEEP Turnoff time Control signal to sleep mode 0.8 1.5 ms LOGIC-LEVEL INPUTS (INx) VIL Input logic low voltage 0.5 V VIH Input logic high voltage 1.5 V VHYS Input hysteresis 200 mV IIL Input logic low current VIN = 0 V -1 1 µA IIH Input logic high current VIN = 3.3 V 33 100 µA RPD Input pulldown resistance To GND 100 kΩ DRIVER OUTPUTS (OUTx) RDS(on)_HS High-side MOSFET on resistance VVM = 24 V, I = 1 A, fPWM = 25 kHz 225 mΩ RDS(on)_LS Low-side MOSFET on resistance VVM = 24 V, I = 1 A, fPWM = 25 kHz 225 mΩ VSD Body diode forward voltage IOUT = 1 A 0.8 V VVM = 24 V, OUTx rising from 10% to tRISE Output rise time 220 ns 90% VVM = 24 V, OUTx falling from 90% to tFALL Output fall time 220 ns 10% tPD Input to output propagation delay INx to OUTx 0.7 1 µs tDEAD Output dead time 200 ns INTEGRATED CURRENT SENSE AND REGULATION (IPROPI, VREF) AIPROPI Current mirror scaling factor 1575 µA/A IOUT = 1.5 A, VVM ≥ 6.5 V, VIPROPI ≤ 3.0 AERR Current mirror total error -5 5 % V tOFF Current regulation off time 25 µs tBLK Current regulation blanking time 1.4 µs tDELAY Current sense delay time 1.1 µs tDEG Current regulation deglitch time 0.7 µs PROTECTION CIRCUITS Supply rising 4.15 4.3 4.45 V VUVLO Supply undervoltage lockout (UVLO) Supply falling 4.05 4.2 4.35 V VUVLO_HYS Supply UVLO hysteresis Rising to falling threshold 100 mV Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 5 Product Folder Links: DRV8251A DRV8251A SLVSFU6 – JANUARY 2022 www.ti.com 4.5 V ≤ VVM ≤ 48 V, –40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical values are at TJ = 25 °C and VVM = 24 V. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tUVLO Supply undervoltage deglitch time 10 µs 4.5 ≤ VVM < 5.5 V 3.7 A IOCP Overcurrent protection trip point VVM ≥ 5.5 V 4.1 A tOCP Overcurrent protection deglitch time 1.5 µs tRETRY Overcurrent protection retry time 3 ms TTSD Thermal shutdown temperature 150 175 °C THYS Thermal shutdown hysteresis 40 °C 7.6 Typical Characteristics 0.85 0.9 0.8 0.8 IVMQ Supply Sleep Current (A) IVMQ Supply Sleep Current (A) 0.75 0.7 0.7 0.6 0.65 0.5 0.6 0.4 0.55 0.3 VVM = 4.5 V TJ = -40 °C VVM = 6.5 V 0.5 TJ = 27 °C 0.2 VVM = 12 V TJ = 85 °C VVM = 24 V 0.45 TJ = 125 °C 0.1 VVM = 36 V TJ = 150 °C VVM = 48 V 0.4 0 0 5 10 15 20 25 30 35 40 45 50 -40 -20 0 20 40 60 80 100 120 140 160 VM Supply Voltage (V) Junction Temperature (°C) Figure 7-1. Sleep Current (IVMQ) vs. Supply Voltage Figure 7-2. Sleep Current (IVMQ) vs. Junction (VVM) Temperature (TJ) 2 1.9 IVM Supply Active Current (mA) 1.8 1.7 1.6 1.5 VVM = 4.5 V VVM = 6.5 V 1.4 VVM = 12 V VVM = 24 V 1.3 VVM = 36 V VVM = 48 V 1.2 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Figure 7-3. Active Current (IVM) vs. Supply Voltage Figure 7-4. Active Current (IVM) vs. Junction (VVM) Temperature (TJ) 6 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: DRV8251A DRV8251A www.ti.com SLVSFU6 – JANUARY 2022 475 380 450 TJ = -40 °C TJ = 27 °C 360 425 TJ = 85 °C 340 400 TJ = 125 °C TJ = 150 °C 320 375 RDS(on)_HS (m) RDS(on)_HS (m) 350 300 325 280 300 260 VVM = 4.5 V 275 240 VVM = 6.5 V 250 VVM = 12 V 220 VVM = 24 V 225 200 VVM = 36 V 200 VVM = 48 V 175 180 0 5 10 15 20 25 30 35 40 45 50 -40 -20 0 20 40 60 80 100 120 140 160 VM Supply Voltage (V) Junction Temperature (°C) Figure 7-5. High-Side RDS(on) vs. VM Supply Voltage Figure 7-6. High-Side RDS(on) vs. Junction Temperature (TJ) 475