TI DRV8251A 4.1-A Brushed DC Motor Driver with Integrated Current Sense and Regulation — Datasheet (SLVSFU6)
DRV8251A
SLVSFU6 – JANUARY 2022
DRV8251A 4.1-A Brushed DC Motor Driver with Integrated Current Sense and
Regulation
1 Features 3 Description
• N-channel H-bridge brushed DC motor driver The DRV8251A device is an integrated motor driver
• 4.5-V to 48-V operating supply voltage range with N-channel H-bridge, charge pump, current sense
• Pin-to-pin, RDS(on), voltage, and current sense/ feedback, current regulation, and protection circuitry.
regulation variants (external shunt resistor and The charge pump improves efficiency by supporting
integrated current mirror) N-channel MOSFET half bridges and 100% duty cycle
driving.
– DRV8870: 6.5-V to 45-V, 565-mΩ, shunt
– DRV8251: 4.5-V to 48-V, 450-mΩ, shunt An internal current mirror architecture on the IPROPI
– DRV8251A: 4.5-V to 48-V, 450-mΩ, mirror pin implements current sensing and regulation. This
– DRV8231: 4.5-V to 33-V, 600-mΩ, shunt eliminates the need for a large power shunt resistor,
– DRV8231A: 4.5-V to 33-V, 600-mΩ, mirror saving board area and reducing system cost. The
• High output current capability: 4.1-A Peak IPROPI current-sense output allows a microcontroller
• PWM control interface to detect motor stall or changes in load conditions.
• Supports 1.8-V, 3.3-V, and 5-V logic inputs The external voltage reference pin, VREF, determines
• Integrated IPROPI current sensing for stall the threshold of current regulation during start-up and
detection and current regulation stall events without interaction from a microcontroller.
• Low-power sleep mode
A low-power sleep mode achieves ultra-low quiescent
– <1-µA at VVM = 24-V, TJ = 25°C current draw by shutting down most of the internal
• Small package and footprint circuitry. Internal protection features include supply
– 8-Pin HSOP with PowerPAD™, 4.9 × 6.0 mm undervoltage lockout, output overcurrent, and device
• Integrated protection features overtemperature.
– VM undervoltage lockout (UVLO)
– Auto-retry overcurrent protection (OCP) The DRV8251A is part of a family of devices which
– Thermal shutdown (TSD) come in pin-to-pin, scalable RDS(on) and supply
voltage options to support various loads and supply
2 Applications rails with minimal design changes. See Section 5 for
• Printers information on the devices in this family. View the full
• Vacuum robot portfolio of brushed motor drivers on ti.com.
• Washer and dryer Device Information (1)
• Coffee machine PART NUMBER PACKAGE BODY SIZE (NOM)
• POS printer DRV8251ADDA HSOP (8) 4.90 mm × 6.00 mm
• Electricity meter
• ATMs (Automated Teller Machines) (1) For all available packages, see the orderable addendum at
• Ventilators the end of the data sheet.
• Surgical equipment 4.5 to 48 V
• Electronic hospital bed and bed control
• Fitness machine DRV8251A
IN1
H-Bridge
Controller
IN2 Motor Driver
VREF Current Sense
IPROPI
RIPROPI
Protec on
Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV8251A
SLVSFU6 – JANUARY 2022 www.ti.com
Table of Contents
1 Features............................................................................1 8.5 Device Functional Modes..........................................17
2 Applications..................................................................... 1 8.6 Pin Diagrams............................................................ 18
3 Description.......................................................................1 9 Application and Implementation.................................. 19
4 Revision History.............................................................. 2 9.1 Application Information............................................. 19
5 Device Comparison......................................................... 3 9.2 Typical Application.................................................... 19
6 Pin Configuration and Functions...................................3 9.3 Current Capability and Thermal Performance.......... 26
7 Specifications.................................................................. 4 10 Power Supply Recommendations..............................31
7.1 Absolute Maximum Ratings........................................ 4 10.1 Bulk Capacitance.................................................... 31
7.2 ESD Ratings............................................................... 4 11 Layout........................................................................... 32
7.3 Recommended Operating Conditions.........................4 11.1 Layout Guidelines................................................... 32
7.4 Thermal Information....................................................4 11.2 Layout Example...................................................... 32
7.5 Electrical Characteristics.............................................5 12 Device and Documentation Support..........................33
7.6 Typical Characteristics................................................ 6 12.1 Documentation Support.......................................... 33
7.7 Timing Diagrams......................................................... 8 12.2 Receiving Notification of Documentation Updates..33
8 Detailed Description........................................................9 12.3 Community Resources............................................33
8.1 Overview..................................................................... 9 12.4 Trademarks............................................................. 33
8.2 Functional Block Diagram........................................... 9 13 Mechanical, Packaging, and Orderable
8.3 External Components................................................. 9 Information.................................................................... 33
8.4 Feature Description...................................................11
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
DATE REVISION NOTES
January 2022 * Initial Release
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5 Device Comparison
Table 5-1. Device Comparison Table
Device Supply RDS(on) Current Current-sense Overcurrent Pin-to-pin
Package
name voltage (V) (mΩ) regulation feedback protection response devices
DRV8870 6.5 to 45 565 Automatic Retry HSOP (4.9x6)
DRV8870,
DRV8251 4.5 to 48 450 External Shunt External Latched Disable HSOP (4.9x6)
DRV8251,
Resistor Amplifier
HSOP (4.9x6) DRV8231
DRV8231 4.5 to 33 600 Automatic Retry
WSON (2x2)
DRV8251A 4.5 to 48 450 Automatic Retry HSOP (4.9x6)
DRV8251A,
Internal current mirror (IPROPI) HSOP (4.9x6)
DRV8231A 4.5 to 33 600 Automatic Retry DRV8231A
WSON (2x2)
6 Pin Configuration and Functions
IPROPI 1 8 OUT2
IN2 2 7 GND
Thermal
IN1 3 Pad 6 OUT1
VREF 4 5 VM
Figure 6-1. DDA Package 8-Pin HSOP Top View
Table 6-1. Pin Functions
PIN
TYPE DESCRIPTION
NAME NO.
GND 7 PWR Device power ground. Connect to system ground.
IN1 3 I Logic inputs. Controls the H-bridge output. Has internal pulldowns. See Table 8-2.
IN2 2 I Logic inputs. Controls the H-bridge output. Has internal pulldowns. See Table 8-2.
IPROPI 1 PWR Analog current output proportional to load current. Section 8.4.2.1.
OUT1 6 O H-bridge output. Connect directly to the motor or other inductive load.
OUT2 8 O H-bridge output. Connect directly to the motor or other inductive load.
4.5-V to 48-V power supply. Connect a 0.1-µF bypass capacitor to ground, as well as
VM 5 PWR
sufficient bulk capacitance, rated for the VM voltage.
Analog input. Apply a voltage between 0 to 5 V. For information on current regulation, see
VREF 4 I
the Section 8.4.2.1 section.
Thermal pad. Connect to board ground. For good thermal dissipation, use large ground
PAD —
planes on multiple layers, and multiple nearby vias connecting those planes.
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7 Specifications
7.1 Absolute Maximum Ratings
over operating temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Power supply pin voltage VM -0.3 50 V
Power supply transient voltage ramp VM 0 2 V/µs
Logic pin voltage INx -0.3 7 V
Reference input pin voltage VREF -0.3 6 V
Output pin voltage OUTx -0.7 VM + 0.7 V
Current sense input pin voltage IPROPI -0.3 5.75 V
Internally Internally
Output current OUTx A
Limited Limited
Ambient temperature, TA –40 125 °C
Junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
7.2 ESD Ratings
VALUE UNIT
Electrostatic Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±6000
V(ESD) V
discharge Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±
6000 V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ± 750
V may actually have higher performance.
7.3 Recommended Operating Conditions
over operating temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VVM Power supply voltage VM 4.5 48 V
VVREF Reference voltage VREF 0 3.6 V
VIN Logic input voltage INx 0 5.5 V
fPWM PWM frequency INx 0 200 kHz
Peak output current, 4.5 ≤ VVM < 5.5 V 0 3.7 A
IOUT (1) OUTx
Peak output current, VVM ≥ 5.5 V 0 4.1 A
IIPROPI Peak output current IPROPI 0 3 mA
TA Operating ambient temperature –40 125 °C
TJ Operating junction temperature –40 150 °C
(1) Power dissipation and thermal limits must be observed
7.4 Thermal Information
DRV8251A
THERMAL METRIC(1) DDA (HSOP) UNIT
8 PINS
RθJA Junction-to-ambient thermal resistance 40.4 °C/W
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DRV8251A
THERMAL METRIC(1) DDA (HSOP) UNIT
8 PINS
RθJC(top) Junction-to-case (top) thermal resistance 54.7 °C/W
RθJB Junction-to-board thermal resistance 14.4 °C/W
ΨJT Junction-to-top characterization parameter 4.1 °C/W
ΨJB Junction-to-board characterization parameter 14.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 4.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics
4.5 V ≤ VVM ≤ 48 V, –40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical values are at TJ = 25 °C and VVM = 24 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY (VM)
IVMQ VM sleep mode current VVM = 24 V, IN1 = IN2 = 0, TJ = 25°C 1 µA
IVM VM active mode current VVM = 24 V, IN1 = IN2 = 1 3 4 mA
tWAKE Turnon time Control signal to active mode 250 µs
tSLEEP Turnoff time Control signal to sleep mode 0.8 1.5 ms
LOGIC-LEVEL INPUTS (INx)
VIL Input logic low voltage 0.5 V
VIH Input logic high voltage 1.5 V
VHYS Input hysteresis 200 mV
IIL Input logic low current VIN = 0 V -1 1 µA
IIH Input logic high current VIN = 3.3 V 33 100 µA
RPD Input pulldown resistance To GND 100 kΩ
DRIVER OUTPUTS (OUTx)
RDS(on)_HS High-side MOSFET on resistance VVM = 24 V, I = 1 A, fPWM = 25 kHz 225 mΩ
RDS(on)_LS Low-side MOSFET on resistance VVM = 24 V, I = 1 A, fPWM = 25 kHz 225 mΩ
VSD Body diode forward voltage IOUT = 1 A 0.8 V
VVM = 24 V, OUTx rising from 10% to
tRISE Output rise time 220 ns
90%
VVM = 24 V, OUTx falling from 90% to
tFALL Output fall time 220 ns
10%
tPD Input to output propagation delay INx to OUTx 0.7 1 µs
tDEAD Output dead time 200 ns
INTEGRATED CURRENT SENSE AND REGULATION (IPROPI, VREF)
AIPROPI Current mirror scaling factor 1575 µA/A
IOUT = 1.5 A, VVM ≥ 6.5 V, VIPROPI ≤ 3.0
AERR Current mirror total error -5 5 %
V
tOFF Current regulation off time 25 µs
tBLK Current regulation blanking time 1.4 µs
tDELAY Current sense delay time 1.1 µs
tDEG Current regulation deglitch time 0.7 µs
PROTECTION CIRCUITS
Supply rising 4.15 4.3 4.45 V
VUVLO Supply undervoltage lockout (UVLO)
Supply falling 4.05 4.2 4.35 V
VUVLO_HYS Supply UVLO hysteresis Rising to falling threshold 100 mV
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4.5 V ≤ VVM ≤ 48 V, –40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical values are at TJ = 25 °C and VVM = 24 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tUVLO Supply undervoltage deglitch time 10 µs
4.5 ≤ VVM < 5.5 V 3.7 A
IOCP Overcurrent protection trip point
VVM ≥ 5.5 V 4.1 A
tOCP Overcurrent protection deglitch time 1.5 µs
tRETRY Overcurrent protection retry time 3 ms
TTSD Thermal shutdown temperature 150 175 °C
THYS Thermal shutdown hysteresis 40 °C
7.6 Typical Characteristics
0.85 0.9
0.8 0.8
IVMQ Supply Sleep Current (A) IVMQ Supply Sleep Current (A)
0.75 0.7
0.7 0.6
0.65 0.5
0.6 0.4
0.55 0.3 VVM = 4.5 V
TJ = -40 °C VVM = 6.5 V
0.5 TJ = 27 °C 0.2 VVM = 12 V
TJ = 85 °C VVM = 24 V
0.45 TJ = 125 °C 0.1 VVM = 36 V
TJ = 150 °C VVM = 48 V
0.4 0
0 5 10 15 20 25 30 35 40 45 50 -40 -20 0 20 40 60 80 100 120 140 160
VM Supply Voltage (V) Junction Temperature (°C)
Figure 7-1. Sleep Current (IVMQ) vs. Supply Voltage Figure 7-2. Sleep Current (IVMQ) vs. Junction
(VVM) Temperature (TJ)
2
1.9
IVM Supply Active Current (mA)
1.8
1.7
1.6
1.5 VVM = 4.5 V
VVM = 6.5 V
1.4 VVM = 12 V
VVM = 24 V
1.3 VVM = 36 V
VVM = 48 V
1.2
-40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Figure 7-3. Active Current (IVM) vs. Supply Voltage Figure 7-4. Active Current (IVM) vs. Junction
(VVM) Temperature (TJ)
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475 380
450 TJ = -40 °C
TJ = 27 °C 360
425 TJ = 85 °C 340
400 TJ = 125 °C
TJ = 150 °C 320
375
RDS(on)_HS (m) RDS(on)_HS (m)
350 300
325 280
300 260
VVM = 4.5 V
275
240 VVM = 6.5 V
250 VVM = 12 V
220 VVM = 24 V
225
200 VVM = 36 V
200 VVM = 48 V
175 180
0 5 10 15 20 25 30 35 40 45 50 -40 -20 0 20 40 60 80 100 120 140 160
VM Supply Voltage (V) Junction Temperature (°C)
Figure 7-5. High-Side RDS(on) vs. VM Supply Voltage Figure 7-6. High-Side RDS(on) vs. Junction
Temperature (TJ)
475