Datasheet · 2026

TI DRV5055 Ratiometric Linear Hall-Effect Sensor — Datasheet (SBAS640C)

Bipolar ratiometric linear Hall sensor with a VCC/2 offset; the rejected alternative to the DRV5056 for the analogue trigger.

Author: Texas Instruments
Year: 2026
Type: Datasheet
Credit: Texas Instruments (ti.com)

hall sensor
linear
trigger

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DRV5055 SBAS640C – JANUARY 2018 – REVISED JUNE 2026 DRV5055 Ratiometric Linear Hall-Effect Sensor 1 Features 3 Description • • • • The DRV5055 is a linear Hall-effect sensor that responds proportionally to magnetic flux density. The device can be used for accurate position sensing in a wide range of applications. • • • • Ratiometric linear Hall-effect magnetic sensor Operates from 3.3V and 5V power supplies Analog output with VCC / 2 quiescent offset Magnetic sensitivity options (At VCC = 5V): – A1/Z1: 100mV/mT, ±21mT range – A2/Z2: 50mV/mT, ±42mT range – A3/Z3: 25mV/mT, ±85mT range – A4/Z4: 12.5mV/mT, ±169mT range – A8: 66mV/mT, ±75mT range Fast 20kHz sensing bandwidth Low-noise output with ±1mA drive Compensation for magnet temperature drift for A versions and none for Z versions Standard industry packages: – Surface-mount SOT-23 – Through-hole TO-92 2 Applications • • • • • • • • • Precise Position Sensing Industrial Automation and Robotics Home Appliances Gamepads, Pedals, Keyboards, Triggers Height Leveling, Tilt and Weight Measurement Fluid Flow Rate Measurement Medical Devices Absolute Angle Encoding Current Sensing The device operates from 3.3V or 5V power supplies. When no magnetic field is present, the analog output drives half of VCC. The output changes linearly with the applied magnetic flux density, and various sensitivity options enable maximal output voltage swing based on the required sensing range. North and south magnetic poles produce unique voltages. Magnetic flux perpendicular to the top of the package is sensed, and the two package options provide different sensing directions. The device uses a ratiometric architecture that can eliminate error from VCC tolerance when the external analog-to-digital converter (ADC) uses the same VCC for the reference. Additionally, the device features magnet temperature compensation to counteract how magnets drift for linear performance across a wide – 40°C to 125°C temperature range. Device options for no temperature compensation of magnet drift are also available. Package Information PART NUMBER DRV5055 (1) (2) PACKAGE(1) PACKAGE SIZE(2) DBZ (SOT-23, 3) 2.92mm × 2.37mm LPG (TO-92, 3) 4mm × 1.52mm For all available packages, see the orderable addendum at the end of the data sheet. The package size (length × width) is a nominal value and includes pins, where applicable VCC OUT VCC DRV5055 VCC Controller OUT ADC VL (MAX) VCC / 2 GND 0V Typical Schematic north VL (MIN) 0 mT B south Magnetic Response An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Pin Configuration and Functions...................................3 5 Specifications.................................................................. 4 5.1 Absolute Maximum Ratings........................................ 4 5.2 ESD Ratings............................................................... 4 5.3 Recommended Operating Conditions.........................4 5.4 Thermal Information....................................................4 5.5 Electrical Characteristics.............................................5 5.6 Magnetic Characteristics.............................................6 5.7 Typical Characteristics................................................ 7 6 Detailed Description......................................................10 6.1 Overview................................................................... 10 6.2 Functional Block Diagram......................................... 10 6.3 Feature Description...................................................10 6.4 Device Functional Modes..........................................14 2 7 Application and Implementation.................................. 15 7.1 Application Information............................................. 15 7.2 Typical Application.................................................... 16 7.3 Best Design Practices...............................................18 7.4 Power Supply Recommendations.............................19 7.5 Layout....................................................................... 19 8 Device and Documentation Support............................20 8.1 Documentation Support............................................ 20 8.2 Receiving Notification of Documentation Updates....20 8.3 Support Resources................................................... 20 8.4 Trademarks............................................................... 20 8.5 Electrostatic Discharge Caution................................20 8.6 Glossary....................................................................20 9 Revision History............................................................ 20 10 Mechanical, Packaging, and Orderable Information.................................................................... 21 Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 4 Pin Configuration and Functions 1 VCC 3 OUT GND 2 Figure 4-1. DBZ Package 3-Pin SOT-23 Top View 1 2 3 VCC GND OUT Figure 4-2. LPG Package 3-Pin TO-92 Top View Table 4-1. Pin Functions PIN I/O DESCRIPTION NAME SOT-23 TO-92 GND 3 2 — Ground reference OUT 2 3 O Analog output VCC 1 1 — Power supply. TI recommends connecting this pin to a ceramic capacitor to ground with a value of at least 0.01 µF. Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 3 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 5 Specifications 5.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN MAX Power supply voltage VCC –0.3 7 UNIT V Output voltage OUT –0.3 VCC + 0.3 V Magnetic flux density, BMAX Unlimited Operating junction temperature, TJ –40 170 °C Storage temperature, Tstg –65 150 °C (1) T Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 5.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 5.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX 3 3.63 4.5 5.5 UNIT VCC Power supply voltage(1) IO Output continuous current –1 1 mA TA Operating ambient temperature(2) –40 125 °C (1) (2) V There are two isolated operating VCC ranges. For more information see the Feature Descriptionsection. Power dissipation and thermal limits must be observed. 5.4 Thermal Information DRV5055 THERMAL METRIC(1) SOT-23 (DBZ) TO-92 (LPG) 3 PINS 3 PINS UNIT RθJA Junction-to-ambient thermal resistance 170 121 °C/W RθJC(top) Junction-to-case (top) thermal resistance 66 67 °C/W RθJB Junction-to-board thermal resistance 49 97 °C/W YJT Junction-to-top characterization parameter 1.7 7.6 °C/W YJB Junction-to-board characterization parameter 48 97 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note. 4 Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 5.5 Electrical Characteristics for VCC = 3V to 3.63V and 4.5V to 5.5V, over operating free-air temperature range (unless otherwise noted) TEST CONDITIONS(1) PARAMETER ICC Operating supply current fBW Sensing bandwidth td Propagation delay time BND Input-referred RMS noise density BN Input-referred noise VN (1) (2) Output-referred noise(2) TYP MAX VCC = 5.0V, B = 0mT MIN 3 5 VCC = 3.3V, B = 0mT 2 4 UNIT mA 20 kHz From change in B to change in OUT 10 µs VCC = 5V 130 VCC = 3.3V 215 BND × 6.6 × √20 kHz BN × S VCC = 5V 0.12 VCC = 3.3V 0.2 DRV5055A1, DRV5055Z1 12 DRV5055A2, DRV5055Z2 6 DRV5055A3, DRV5055Z3 3 DRV5055A4, DRV5055Z4 1.5 DRV5055A8 7.92 nT/√Hz mTPP mVPP B is the applied magnetic flux density. VN describes voltage noise on the device output. If the full device bandwidth is not needed, noise can be reduced with an RC filter. Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 5 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 5.6 Magnetic Characteristics for VCC = 3V to 3.63V and 4.5V to 5.5V, over operating free-air temperature range (unless otherwise noted) PARAMETER VQ TYP MAX 2.43 2.5 2.57 VCC = 3.3V 1.59 1.65 1.71 B = 0mT, TA = 25°C Quiescent voltage temperature drift B = 0 mT, TA = –40°C to 125°C versus 25°C VQΔT VQΔL MIN VCC = 5V Quiescent voltage VQΔT VQRE TEST CONDITIONS(1) S Sensitivity VCC = 3.3 V, TA = 25°C VCC = 5 V, TA = 25°C BL Linear magnetic sensing range(3) VCC = 3.3 V, TA = 25°C 6 ±1% × VCC V VCC = 3.3 V ±1% × VCC V ±0.2 % High-temperature operating stress for 1000 hours VCC = 5 V, TA = 25°C V VCC = 5.0 V Quiescent voltage ratiometry error(2) Quiescent voltage lifetime drift UNIT <0.5 1 DRV5055A1/ DRV5055Z1 95 100 105 DRV5055A8 63.3 66.6 69.9 DRV5055A2/ DRV5055Z2 47.5 50 52.5 DRV5055A3/ DRV5055Z3 23.8 25 26.2 DRV5055A4/ DRV5055Z4 11.9 12.5 13.2 DRV5055A1/ DRV5055Z1 57 60 63 DRV5055A8 38 40 42 DRV5055A2/ DRV5055Z2 28.5 30 31.5 DRV5055A3/ DRV5055Z3 14.3 15 15.8 DRV5055A4/ DRV5055Z4 7.1 7.5 7.9 DRV5055A1/ DRV5055Z1 ±21 DRV5055A8 ±32.5 DRV5055A2/ DRV5055Z2 ±42 DRV5055A3/ DRV5055Z3 ±85 DRV5055A4/ DRV5055Z4 ±169 DRV5055A1/ DRV5055Z1 ±22 DRV5055A8 ±39 DRV5055A2/ DRV5055Z2 ±44 DRV5055A3/ DRV5055Z3 ±88 DRV5055A4/ DRV5055Z4 ±176 VL Linear range of output voltage(4) STC Sensitivity temperature compensation for magnets(5) DRV5055A1/A2/A3/A4/A8 STC Sensitivity temperature compensation for magnets(5) DRV5055Z1/Z2/Z3/Z4 mV/mT mT 0.2 Submit Document Feedback % 0.04 VCC – 0.2 0.12 0 0.2 V %/°C %/°C Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 for VCC = 3V to 3.63V and 4.5V to 5.5V, over operating free-air temperature range (unless otherwise noted) TEST CONDITIONS(1) PARAMETER MIN TYP MAX UNIT SLE Sensitivity linearity error(4) VOUT is within VL ±1 % SSE Sensitivity symmetry error(4) VOUT is within VL ±1 % SRE Sensitivity ratiometry error(2) TA = 25°C, with respect to VCC = 3.3V or 5V SΔL Sensitivity lifetime drift High-temperature operating stress for 1000 hours (1) (2) (3) (4) (5) –2.5 2.5 % <0.5 % B is the applied magnetic flux density. See the Ratiometric Architecture section. BL describes the minimum linear sensing range at 25°C taking into account the maximum VQ and Sensitivity tolerances. See the Sensitivity Linearity section. STC describes the rate the device increases Sensitivity with temperature. For more information, see the section. 5.7 Typical Characteristics 2.6 2.6 2.4 2.4 Quiescent Voltage (V) Quiescent Voltage (V) for TA = 25°C (unless otherwise noted) 2.2 2 VCC = 3.3 V VCC = 5 V 1.8 1.6 -40 -20 0 20 40 60 80 Temperature (qC) 100 120 2.2 2 VCC = 3.3 V VCC = 5 V 1.8 1.6 -40 140 -20 0 40 60 80 Temperature (qC) 100 120 140 DRV5055Z1/Z2/Z3/Z4 DRV5055A1/A2/A3/A4/A8 Figure 5-2. Quiescent Voltage vs Temperature Figure 5-1. Quiescent Voltage vs Temperature 2.8 2.8 2.6 2.6 Quiescent Voltage (V) Quiescent Voltage (V) 20 D002 2.4 2.2 2 1.8 2.4 2.2 2 1.8 1.6 1.6 1.4 1.4 3 3.25 3.5 3.75 4 4.25 4.5 4.75 Supply Voltage (V) 5 5.25 5.5 3 3.25 D003 3.5 3.75 4 4.25 4.5 4.75 Supply Voltage (V) 5 5.25 5.5 DRV5055Z1/Z2/Z3/AZ DRV5055A1/A2/A3/A4/A8 Figure 5-3. Quiescent Voltage vs Supply Voltage Figure 5-4. Quiescent Voltage vs Supply Voltage Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 7 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 5.7 Typical Characteristics (continued) for TA = 25°C (unless otherwise noted) 80 120 DRV5055A1 DRV5055A2 DRV5055A3 DRV5055A4 Sensitivity (mV/mT) Sensitivity (mV/mT) 100 60 40 DRV5055A1 DRV5055A2 DRV5055A3 DRV5055A4 80 60 40 20 20 0 -40 -20 0 20 40 60 80 Temperature (qC) 100 120 0 -40 140 -20 0 20 D004 40 60 80 Temperature (qC) VCC = 3.3 V 100 120 140 D005 VCC = 5 V Figure 5-5. Sensitivity vs Temperature Figure 5-6. Sensitivity vs Temperature 80 120 Sensitivity (mV/mT) Sensitivity (mV/mT) 100 60 DRV5055Z1 DRV5055Z2 DRV5055Z3 DRV5055Z4 40 DRV5055Z1 DRV5055Z2 DRV5055Z3 DRV5055Z4 80 60 40 20 20 0 -40 -20 0 20 40 60 80 Temperature (qC) 100 120 0 -40 140 -20 0 20 VCC = 3.3 V 140 Figure 5-8. Sensitivity vs Temperature 100 DRV5055A1 DRV5055A2 DRV5055A3 DRV5055A4 Sensitivity (mV/mT) Sensitivity (mV/mT) 120 120 DRV055A1 DRV055A2 DRV055A3 DRV055A4 80 60 40 20 3 3.1 3.2 3.3 3.4 Supply Voltage (V) 3.5 0 4.5 3.6 4.6 D006 VCC = 3.3 V ±10% 4.7 4.8 4.9 5 5.1 5.2 Supply Voltage (V) 5.3 5.4 5.5 D007 VCC = 5 V ±10% Figure 5-9. Sensitivity vs Supply Voltage 8 100 VCC = 5 V Figure 5-7. Sensitivity vs Temperature 70 65 60 55 50 45 40 35 30 25 20 15 10 5 40 60 80 Temperature (qC) Figure 5-10. Sensitivity vs Supply Voltage Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 5.7 Typical Characteristics (continued) 70 65 60 55 50 45 40 35 30 25 20 15 10 5 120 100 DRV5055Z1 DRV5055Z2 DRV5055Z3 DRV5055Z4 Sensitivity (mV/mT) Sensitivity (mV/mT) for TA = 25°C (unless otherwise noted) DRV055Z1 DRV055Z2 DRV055Z3 DRV055Z4 80 60 40 20 3 3.1 3.2 3.3 3.4 Supply Voltage (V) 3.5 3.6 0 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 Supply Voltage (V) VCC = 3.3 V ±10% 5.3 5.4 5.5 VCC = 5 V ±10% Figure 5-11. Sensitivity vs Supply Voltage Figure 5-12. Sensitivity vs Supply Voltage Operating Supply Current (mA) 6.6 6.4 6.2 6 5.8 5.6 5.4 5.2 -40 VCC = 3.3 V VCC = 5 V -20 0 20 40 60 80 Temperature (qC) 100 120 140 D001 Figure 5-13. Operating Supply Current vs Temperature Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 9 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 6 Detailed Description 6.1 Overview The DRV5055 is a 3-pin linear Hall effect sensor with fully integrated signal conditioning, temperature compensation circuits, mechanical stress cancellation, and amplifiers. The device operates from 3.3-V and 5-V (±10%) power supplies, measures magnetic flux density, and outputs a proportional analog voltage that is referenced to VCC. 6.2 Functional Block Diagram Element Bias Offset Cancellation Temperature Compensation Bandgap Reference VCC Trim Registers GND 0.01 F (minimum) VCC Optional filter Precision Amplifier Output Driver OUT 6.3 Feature Description 6.3.1 Magnetic Flux Direction As shown in Figure 6-1, the DRV5055 is sensitive to the magnetic field component that is perpendicular to the top of the package. TO-92 B B SOT-23 PCB Figure 6-1. Direction of Sensitivity 10 Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 Magnetic flux that travels from the bottom to the top of the package is considered positive in this document. This condition exists when a south magnetic pole is near the top (marked-side) of the package. Magnetic flux that travels from the top to the bottom of the package results in negative millitesla values. N S S PCB N PCB Figure 6-2. The Flux Direction for Positive B 6.3.2 Magnetic Response When the DRV5055 is powered, the DRV5055 outputs an analog voltage according to Equation 1: where • • • • • • VOUT = VQ + B × Sensitivity 25°C × 1 + STC × TA − 25°C (1) VQ is typically half of VCC B is the applied magnetic flux density Sensitivity(25°C) depends on the device option and VCC STC is typically 0.12%/°C for device options DRV5055A1 - DRV5055A4 and is 0%/°C for DRV5055Z1 DRV5055Z4 options TA is the ambient temperature VOUT is within the VL range As an example, consider the DRV5055A3 with VCC = 3.3 V, a temperature of 50°C, and 67 mT applied. Excluding tolerances, VOUT = 1650 mV + 67 mT × (15 mV/mT × (1 + 0.0012/°C × (50°C – 25°C))) = 2685 mV. 6.3.3 Sensitivity Linearity The device produces a linear response when the output voltage is within the specified VL range. Outside this range, sensitivity is reduced and nonlinear. Figure 6-3 the magnetic response. Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 11 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 OUT VCC VL (MAX) VCC / 2 0V north VL (MIN) B south 0 mT Figure 6-3. Magnetic Response Equation 2 calculates parameter BL, the minimum linear sensing range at 25°C taking into account the maximum quiescent voltage and sensitivity tolerances. BL(MIN) = VL(MAX) ± VQ(MAX) S(MAX) (2) The parameter SLE defines linearity error as the difference in sensitivity between any two positive B values, and any two negative B values, while the output is within the VL range. The parameter SSE defines symmetry error as the difference in sensitivity between any positive B value and the negative B value of the same magnitude, while the output voltage is within the VL range. 6.3.4 Ratiometric Architecture The DRV5055 has a ratiometric analog architecture that scales the quiescent voltage and sensitivity linearly with the power-supply voltage. For example, the quiescent voltage and sensitivity are 5% higher when VCC = 5.25 V compared to VCC = 5 V. This behavior enables external ADCs to digitize a consistent value regardless of the power-supply voltage tolerance, when the ADC uses VCC as its reference. Equation 3 calculates the sensitivity ratiometry error: SRE = 1 ± S(VCC) / S(5V) VCC / 5V for V CC = 4.5 V to 5.5 V, SRE = 1 ± S(VCC) / S(3.3V) VCC / 3.3V for V CC = 3 V to 3.63 V (3) where • • • S(VCC) is the sensitivity at the current VCC voltage S(5V) or S(3.3V) is the sensitivity when VCC = 5 V or 3.3 V VCC is the current VCC voltage Equation 4 calculates the quiescent voltage ratiometry error: VQRE = 1 ± VQ(VCC) / VQ(5V) VCC / 5V for V CC = 4.5 V to 5.5 V, VQRE = 1 ± VQ(VCC) / VQ(3.3V) VCC / 3.3V for V CC = 3 V to 3.63 V where • • • 12 VQ(VCC) is the quiescent voltage at the current VCC voltage VQ(5V) or VQ(3.3V) is the quiescent voltage when VCC = 5 V or 3.3 V VCC is the current VCC voltage Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 (4) DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 6.3.5 Operating VCC Ranges The DRV5055 has two recommended operating VCC ranges: 3 V to 3.63 V and 4.5 V to 5.5 V. When VCC is in the middle region between 3.63 V to 4.5 V, the device continues to function, but sensitivity is less known because there is a crossover threshold near 4 V that adjusts device characteristics. 6.3.6 Sensitivity Temperature Compensation for Magnets Magnets generally produce weaker fields as temperature increases. The DRV5055 can either compensate by increasing sensitivity with temperature or by keeping the sensitivity constant, as defined by the parameters STC and STCz, respectively. For device options DRV5055A1 - DRV5055A4, the sensitivity at TA = 125°C is typically 12% higher than at TA = 25°C. For device options DRV5055Z1 - DRV5055Z4, the sensitivity at TA = 125°C is typically same as the value at TA = 25°C. 6.3.7 Power-On Time After the VCC voltage is applied, the DRV5055 requires a short initialization time before the output is set. The parameter tON describes the time from when VCC crosses 3 V until OUT is within 5% of VQ, with 0 mT applied and no load attached to OUT. Figure 6-4 shows this timing diagram. VCC 3V tON time Output 95% × V Q Invalid time Figure 6-4. tON Definition Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 13 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 6.3.8 Hall Element Location Figure 6-5 shows the location of the sensing element inside each package option. SOT-23 Top View SOT-23 Side View centered 650 µm ±50 µm ±80 µm TO-92 Top View 2 mm 2 mm TO-92 Side View 1.54 mm 1.61 mm ±50 µm 1030 µm ±115 µm Figure 6-5. Hall Element Location 6.4 Device Functional Modes The DRV5055 has one mode of operation that applies when the Recommended Operating Conditions are met. 14 Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 7 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 7.1 Application Information 7.1.1 Selecting the Sensitivity Option Select the highest DRV5055 sensitivity option that can measure the required range of magnetic flux density, so that the output voltage swing is maximized. Larger-sized magnets and farther sensing distances can generally enable better positional accuracy than very small magnets at close distances, because magnetic flux density increases exponentially with the proximity to a magnet. TI created an online tool to help with simple magnet calculations at https://www.ti.com/product/drv5013. 7.1.2 Temperature Compensation for Magnets The DRV5055 temperature compensation is designed to directly compensate the average drift of neodymium (NdFeB) magnets and partially compensate ferrite magnets. The residual induction (Br) of a magnet typically reduces by 0.12%/°C for NdFeB, and 0.20%/°C for ferrite. When the operating temperature of a system is reduced, temperature drift errors are also reduced. 7.1.3 Adding a Low-Pass Filter As shown in Functional Block Diagram, an RC low-pass filter can be added to the device output for the purpose of minimizing voltage noise when the full 20-kHz bandwidth is not needed. This filter can improve the signal-to-noise ratio (SNR) and overall accuracy. Do not connect a capacitor directly to the device output without a resistor in between because doing so can make the output unstable. 7.1.4 Designing for Wire Break Detection Some systems must detect if interconnect wires become open or shorted. The DRV5055 can support this function. First, select a sensitivity option that causes the output voltage to stay within the VL range during normal operation. Second, add a pullup resistor between OUT and VCC. TI recommends a value between 20 kΩ to 100 kΩ, and the current through OUT must not exceed the IO specification, including current going into an external ADC. Then, if the output voltage is ever measured to be within 150 mV of VCC or GND, a fault condition exists. Figure 7-1 shows the circuit, and Table 7-1 describes fault scenarios. PCB DRV5055-Q1 VCC OUT VCC Cable VOUT GND Figure 7-1. Wire Fault Detection Circuit Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 15 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 Table 7-1. Fault Scenarios and the Resulting VOUT FAULT SCENARIO VOUT VCC disconnects Close to GND GND disconnects Close to VCC VCC shorts to OUT Close to VCC GND shorts to OUT Close to GND 7.2 Typical Application S N Figure 7-2. Common Magnet Orientation 7.2.1 Design Requirements Use the parameters listed in Table 7-2 for this design example. Table 7-2. Design Parameters DESIGN PARAMETER EXAMPLE VALUE VCC 5V Magnet 15 × 5 × 5 mm NdFeB Travel distance 12 mm Maximum B at the sensor at 25°C ±75 mT Device option DRV5055A3 7.2.2 Detailed Design Procedure Linear Hall effect sensors provide flexibility in mechanical design, because many possible magnet orientations and movements produce a usable response from the sensor. Figure 7-2 shows one of the most common orientations, which uses the full north to south range of the sensor and causes a close-to-linear change in magnetic flux density as the magnet moves across. When designing a linear magnetic sensing system, always consider these three variables: the magnet, sensing distance, and the range of the sensor. Select the DRV5055 with the highest sensitivity that has a BL (linear magnetic sensing range) that is larger than the maximum magnetic flux density in the application. To determine the magnetic flux density the sensor receives, TI recommends using magnetic field simulation software, referring to magnet specifications, and testing. 16 Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 7.2.3 Application Curve Figure 7-3 shows the simulated magnetic flux from a NdFeB magnet. Figure 7-3. Simulated Magnetic Flux Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 17 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 7.3 Best Design Practices The Hall element is sensitive to magnetic fields that are perpendicular to the top of the package, therefore a correct magnet approach must be used for the sensor to detect the field. Figure 7-4 shows correct and incorrect approaches. CORRECT N S S N N S INCORRECT N S Figure 7-4. Correct and Incorrect Magnet Approaches 18 Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 7.4 Power Supply Recommendations A decoupling capacitor close to the device must be used to provide local energy with minimal inductance. TI recommends using a ceramic capacitor with a value of at least 0.01 µF. 7.5 Layout 7.5.1 Layout Guidelines Magnetic fields pass through most nonferromagnetic materials with no significant disturbance. Embedding Hall effect sensors within plastic or aluminum enclosures and sensing magnets on the outside is common practice. Magnetic fields also easily pass through most printed circuit boards, which makes placing the magnet on the opposite side possible. 7.5.2 Layout Examples VCC GND VCC GND OUT OUT Figure 7-5. Layout Examples Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 19 DRV5055 www.ti.com SBAS640C – JANUARY 2018 – REVISED JUNE 2026 8 Device and Documentation Support 8.1 Documentation Support 8.1.1 Related Documentation For related documentation see the following: • Texas Instruments, Overview Using Linear Hall Effect Sensors to Measure Angle application brief • Texas Instruments, Incremental Rotary Encoder Design Considerations application brief 8.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Notifications to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 8.3 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 8.4 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 8.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 8.6 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 9 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision B (April 2021) to Revision C (June 2026) Page • Added A8 sub-bullet to Magnetic Sensitivity Options Features bullet................................................................ 1 • Changed Device Information table to Package Information .............................................................................. 1 • Changed the operating supply current and power-on time parameters............................................................. 5 • Added output-referred noise for variant DRV5055A8.........................................................................................5 • Added test conditions to the quiescent voltage temperature drift parameter..................................................... 6 • Added the maximum quiescent voltage lifetime drift value to the Magnetic Characteristics table..................... 6 • Added sensitivity and range for DRV5055A8 variant......................................................................................... 6 • Added the sensitivity linearity lifetime drift parameter to the Magnetic Characteristics table............................. 6 • Added graphs for DV5055A8 option in the Typical Characteristics section........................................................7 • Changed Dos and Donts table to Best Design Practices ................................................................................ 18 Changes from Revision A (June 2020) to Revision B (April 2021) Page • Updated the numbering format for tables, figures, and cross-references throughout the document................. 1 • Changed the absolute maximum operating junction temperature from: 150°C to: 170°C..................................4 20 Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 DRV5055 www.ti.com • SBAS640C – JANUARY 2018 – REVISED JUNE 2026 Removed the Product Preview tablenote from the Magnetic Characteristics table............................................6 Changes from Revision * (January 2018) to Revision A (June 2020) Page • Added Zero TC sensitivity options to the data sheet..........................................................................................1 • Added Zero TC information to the Electrical Characteristics..............................................................................5 • Added Zero TC information to the Magnetic Characteristics table..................................................................... 6 • Added graphs for DV5055Z1/Z2/Z3/Z4 options in the Typical Characteristics section...................................... 7 • Updated STC definition in Equation 1 ...............................................................................................................11 • Updated the Sensitivity Temperature Compensation for Magnets section for Zero TC options....................... 13 10 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: DRV5055 21 PACKAGE OPTION ADDENDUM www.ti.com 14-Jun-2026 PACKAGING INFORMATION Orderable part number Status Material type (1) (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material MSL rating/ Peak reflow (4) (5) Op temp (°C) Part marking (6) DRV5055A1QDBZR Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A1 DRV5055A1QDBZR.A Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A1 DRV5055A1QDBZR.B Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A1 DRV5055A1QDBZT Obsolete Production SOT-23 (DBZ) | 3 - - Call TI Call TI -40 to 125 55A1 DRV5055A1QLPG Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A1 DRV5055A1QLPG.A Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A1 DRV5055A1QLPG.B Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A1 DRV5055A1QLPGM Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A1 DRV5055A1QLPGM.A Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A1 DRV5055A1QLPGM.B Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A1 DRV5055A2QDBZR Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A2 DRV5055A2QDBZR.A Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A2 DRV5055A2QDBZR.B Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A2 DRV5055A2QDBZT Obsolete Production SOT-23 (DBZ) | 3 - - Call TI Call TI -40 to 125 55A2 DRV5055A2QLPG Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A2 DRV5055A2QLPG.A Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A2 DRV5055A2QLPG.B Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A2 DRV5055A2QLPGM Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A2 DRV5055A2QLPGM.A Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A2 DRV5055A2QLPGM.B Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A2 DRV5055A3QDBZR Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A3 DRV5055A3QDBZR.A Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A3 DRV5055A3QDBZR.B Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A3 DRV5055A3QDBZT Obsolete Production SOT-23 (DBZ) | 3 - - Call TI Call TI -40 to 125 55A3 DRV5055A3QLPG Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A3 DRV5055A3QLPG.A Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A3 DRV5055A3QLPG.B Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A3 DRV5055A3QLPGM Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A3 DRV5055A3QLPGM.A Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A3 Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com Orderable part number (1) 14-Jun-2026 Status Material type (1) (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material MSL rating/ Peak reflow (4) (5) Op temp (°C) Part marking (6) DRV5055A3QLPGM.B Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A3 DRV5055A4QDBZR Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A4 DRV5055A4QDBZR.A Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A4 DRV5055A4QDBZR.B Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55A4 DRV5055A4QDBZT Obsolete Production SOT-23 (DBZ) | 3 - - Call TI Call TI -40 to 125 55A4 DRV5055A4QLPG Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A4 DRV5055A4QLPG.A Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A4 DRV5055A4QLPG.B Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55A4 DRV5055A4QLPGM Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A4 DRV5055A4QLPGM.A Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A4 DRV5055A4QLPGM.B Active Production TO-92 (LPG) | 3 3000 | AMMO Yes SN N/A for Pkg Type -40 to 125 55A4 DRV5055A8QDBZR Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-1-260C-UNLIM -40 to 125 55A8 DRV5055Z1QDBZR Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55Z1 DRV5055Z1QDBZR.A Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55Z1 DRV5055Z1QDBZR.B Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55Z1 DRV5055Z1QDBZT Obsolete Production SOT-23 (DBZ) | 3 - - Call TI Call TI -40 to 125 55Z1 DRV5055Z2QDBZR Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55Z2 DRV5055Z2QDBZR.A Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55Z2 DRV5055Z2QDBZR.B Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55Z2 DRV5055Z2QDBZT Obsolete Production SOT-23 (DBZ) | 3 - - Call TI Call TI -40 to 125 55Z2 DRV5055Z2QLPG Active Production TO-92 (LPG) | 3 1000 | BULK Yes SN N/A for Pkg Type -40 to 125 55Z2 DRV5055Z3QDBZR Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55Z3 DRV5055Z3QDBZR.A Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55Z3 DRV5055Z3QDBZR.B Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes SN Level-2-260C-1 YEAR -40 to 125 55Z3 DRV5055Z3QDBZT Obsolete Production SOT-23 (DBZ) | 3 - - Call TI Call TI -40 to 125 55Z3 DRV5