Datasheet · 2011

Vishay BPW41N Silicon PIN Photodiode — Datasheet (Rev 1.6)

Side-view PIN photodiode with daylight filter; a rejected alternative.

Author: Vishay Semiconductors
Year: 2011
Type: Datasheet
Credit: Vishay (vishay.com)

photodiode
pin
daylight filter

BPW41N www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: side view • Dimensions (in mm): 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times 94 8480 • Angle of half sensitivity: ϕ = ± 65° • Compliant to RoHS Directive to 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 DESCRIPTION BPW41N is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm) 45 ± 65 870 to 1050 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPW41N Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW41N Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C SYMBOL VALUE VR 60 UNIT V PV 215 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.6, 23-Aug-11 Document Number: 81522 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW41N www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 MAX. UNIT V VR = 10 V, E = 0 Iro 2 VR= 0 V, f = 1 MHz, E = 0 CD 70 VR= 3 V, f = 1 MHz, E = 0 CD 25 Reverse dark current Diode capacitance TYP. 30 nA 40 pF pF Open circuit Voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 38 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 45 μA 43 Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 950 nm Range of spectral bandwidth λ0.5 870 to 1050 nm VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√ Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns Noise equivalent power 100 1.4 VR = 5 V λ = 950 nm 1.2 1 mW/cm2 I ra - Reverse Light Current (µA) I ra rel - Relative Reverse Light Current BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.0 0.8 0.5 mW/cm2 λ = 950 nm 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 1 0.6 0 94 8409 20 40 60 80 0.1 100 Tamb - Ambient Temperature (°C) 94 8415 Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature CD - Diode Capacitance (pF) 10 VR = 5 V λ = 950 nm 1 94 8414 0.1 1 10 E e - Irradiance (mW/cm²) Fig. 2 - Reverse Light Current vs. Irradiance Rev. 1.6, 23-Aug-11 10 100 80 100 0.1 0.01 1 V R - Reverse Voltage (V) Fig. 3 - Reverse Light Current vs. Reverse Voltage 1000 Ira - Reverse Light Current (µA) 0.2 mW/cm2 10 E=0 f = 1 MHz 60 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Document Number: 81522 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW41N www.vishay.com Vishay Semiconductors 10° 20° 1.0 0.8 0.6 0.4 0.2 0 750 850 950 0.9 50° 0.8 60° 70° 0.7 80° 0.6 1150 1050 λ - Wavelength (nm) 94 8408 40° 1.0 ϕ - Angular Displacement 30° Srel - Relative Radiant Sensitivity S (λ)rel - Relative Spectral Sensitivity 0° 1.2 0.4 0.2 0 94 8406 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 4 ± 0.2 5 ± 0.2 C < 0.5 6.8 ± 0.3 Chip position (2.05) 19.8 - 0.8 8.9 ± 0.3 Sensitive area (2.8) A < 0.65 Area not plane + 0.01 0.45 - 0.05 2.5 nom. Drawing-No.: 6.544-5108.01-4 2.3 ± 0.2 + 0.1 0.4 - 0.05 technical drawings according to DIN specifications Issue:1; 01.07.96 96 12195 Rev. 1.6, 23-Aug-11 Document Number: 81522 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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