Datasheet · 2023

Alpha & Omega AO3400A 30 V N-Channel MOSFET — Datasheet

SOT-23 logic-level MOSFET specified at VGS = 2.5 V; the rumble-motor switch in the reference electronics.

Author: Alpha and Omega Semiconductor
Year: 2023
Type: Datasheet
Credit: Alpha and Omega Semiconductor (aosmd.com)

mosfet
sot-23
rumble

AO3400A 30V N-Channel MOSFET General Description Product Summary The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) 30V 5.7A RDS(ON) (at VGS=10V) < 26.5mW RDS(ON) (at VGS = 4.5V) < 32mW RDS(ON) (at VGS = 2.5V) < 48mW VDS SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current VGS TA=25°C C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3.1: July 2023 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V 30 PD TA=70°C ±12 4.7 IDM TA=25°C Power Dissipation B Units V 5.7 ID TA=70°C Maximum 30 RqJA RqJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3400A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 30 Typ Max V VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250mA 0.65 VGS=4.5V, VDS=5V 30 Units TJ=55°C 5 mA 100 nA 1.05 1.45 V 18 26.5 28 38 VGS=4.5V, ID=5A 19 32 mW VGS=2.5V, ID=3A 24 48 mW Forward Transconductance VDS=5V, ID=5.7A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current ID(ON) VGS=10V, ID=5.7A RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz A S 1 V 2 A 630 pF 75 pF 50 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=4.5V, VDS=15V, ID=5.7A 1.5 mW pF 3 4.5 W 6 7 nC Qgs Gate Source Charge 1.3 nC Qgd Gate Drain Charge 1.8 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time 2.5 ns tD(off) Turn-Off DelayTime 25 ns tf trr Turn-Off Fall Time 4 ns IF=5.7A, dI/dt=100A/ms 8.5 Qrr Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/ms 2.6 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=2.6W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev 3.1: July 2023 www.aosmd.com Page 2 of 5 AO3400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 15 10V 35 3V VDS=5V 4.5V 12 30 2.5V 9 ID(A) ID (A) 25 20 6 15 25°C 125°C 10 3 VGS=2V 5 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.8 25 RDS(ON) (mW) 0.5 VGS=4.5V 20 15 VGS=10V VGS=4.5V ID=5A 1.6 1.4 17 5 VGS=10V ID=5.7A2 1.2 10 1 0.8 10 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 50 1.0E+01 ID=5.7A 1.0E+00 40 40 IS (A) RDS(ON) (mW) 1.0E-01 125°C 30 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3.1: July 2023 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1000 VDS=15V ID=5.7A 4 800 Capacitance (pF) VGS (Volts) Ciss 3 2 600 400 Coss 1 200 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10ms RDS(ON) limited 100ms 1ms 1.0 10ms 0.1 TJ(Max)=150°C TA=25°C 0.0 0.01 Power (W) ID (Amps) 10.0 100 10 10s DC 0.1 1 1 0.00001 10 0.001 0.1 10 1000 100 VDS (Volts) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=125°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3.1: July 2023 www.aosmd.com Page 4 of 5 AO3400A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgd Qgs VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 3.1: July 2023 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5